Engineer the lattice.
Expand what’s possible.
Native InGaN® is Opnovix’s engineered III-nitride lattice platform: a relaxed, planar foundation for greater control of strain, composition and growth temperature.
THE OPPORTUNITY
Make the lattice
a design choice.
Conventional III-nitride devices inherit the GaN lattice. That limits how their active regions can be designed. Native InGaN® makes the underlying lattice itself an engineering variable.
GaN
The inherited lattice
GaN enabled efficient blue LEDs. Growing InGaN active regions on that fixed lattice also introduces strain that constrains device design.
InGaN
More indium. More strain.
More indium moves emission toward green and red. On GaN, it also increases lattice mismatch, making high-quality active regions harder to grow, and less color stable.
Native InGaN®
The engineered lattice
A relaxed InGaN lattice reduces mismatch with indium-rich active regions and expands the choices in composition, strain and growth temperature.
OPTICAL CONSEQUENCES
Three long-standing limits. One platform.
For decades, III-nitride emitters have inherited the GaN lattice. Native InGaN® changes the lattice itself. Under matched growth, changing only the lattice shifts emission ~80 nm, or reaches the same wavelength at higher growth temperatures.
THE DATA
~80 nm longer emission, from the same growth.
Matched quantum wells on GaN and two Native InGaN® templates.
~13% Native InGaN®
~8% Native InGaN®
GaN (control)
<!- chart ->
Photoluminescence from matched multiple-quantum-well growths. Solid: fit to measured data; dashed: extended fit.
~80 nm longer emission
Longer emission at the same growth temperature (~13% template vs. GaN).
~45 °C hotter growth
Hotter growth for the same emission wavelength, which can improve crystal quality.
Simultaneous growths
Matched quantum-well growths across GaN and two Native InGaN® templates.
DEVICE DESIGN
New freedom in active
region design.
Blue LEDs
Reduced strain permits thicker active region designs and greater control of carrier distribution. Our “no-droop” blue LED program aims to reduce the carrier densities that drive Auger-Meitner losses at high current.
Green & red emitters
A larger template lattice reduces mismatch with indium-rich active regions, giving engineers more freedom to optimize composition and growth temperature for efficient green and true III-nitride red emitters.
Visible laser diodes
Reducing mismatch with indium-rich gain regions opens new design options for longer-wavelength III-nitride lasers. Our roadmap starts with edge-emitting laser diodes and extends toward visible VCSELs.
III-nitride RGB VCSELs
Native InGaN® is the material foundation for developing red, green and blue III-nitride VCSELs. Our published architectures support a longer-term vision of individual emitters and integrated light engines for AR, projection and other applications.
Proven.
Grown side by side, Native InGaN® emits longer and brighter than GaN, with relaxation verified across the whole wafer.
Protected.
Opnovix pioneered Native InGaN®, with patents covering methods, structures and device applications.
Early.
Roadmaps are moving into the regimes where strain bites hardest. Partners who engage now help shape the platform.